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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3PFa package Complement to type 2SD1487 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB1056 Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage INCH Collector-emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -140 -140 -5 -7 -12 UNIT V V V A A Collector current Collector current-peak TC=25ae 80 W 3 PC Collector power dissipation Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance CONDITIONS IC=-5A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 40 20 330 20 MIN TYP. 2SB1056 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT MAX -2.0 -1.8 -50 -50 UNIT V V |I |I A A 200 hFE-2 classifications R 40-80 Q Transition frequency 60-120 pF IN ANG CH P 100-200 EMIC ES DUC ON TOR MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1056 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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